SI7792DP-T1-GE3
Part Number SI7792DP-T1-GE3
Manufacturer Vishay Siliconix
Description MOSFET N-CH 30V 40.6A/60A PPAK
Quantity Available 2575 pcs new original in stock.
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Datasheets 1.SI7792DP-T1-GE3.pdf2.SI7792DP-T1-GE3.pdf
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Technical Information of SI7792DP-T1-GE3
Manufacturer Part Number SI7792DP-T1-GE3 Category  
Manufacturer Electro-Films (EFI) / Vishay Description MOSFET N-CH 30V 40.6A/60A PPAK
Package / Case PowerPAK® SO-8 Quantity Available 2575 pcs
Vgs(th) (Max) @ Id 2.5V @ 250µA Vgs (Max) ±20V
Technology MOSFET (Metal Oxide) Supplier Device Package PowerPAK® SO-8
Series SkyFET®, TrenchFET® Gen III Rds On (Max) @ Id, Vgs 2.1mOhm @ 20A, 10V
Power Dissipation (Max) 6.25W (Ta), 104W (Tc) Package / Case PowerPAK® SO-8
Package Tape & Reel (TR) Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Input Capacitance (Ciss) (Max) @ Vds 4735 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs 135 nC @ 10 V FET Type N-Channel
FET Feature Schottky Diode (Body) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Drain to Source Voltage (Vdss) 30 V Current - Continuous Drain (Id) @ 25°C 40.6A (Ta), 60A (Tc)
Base Product Number SI7792  
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