SI7774DP-T1-GE3
Part Number SI7774DP-T1-GE3
Manufacturer Electro-Films (EFI) / Vishay
Description MOSFET N-CH 30V 60A PPAK SO-8
Quantity Available 2683 pcs new original in stock.
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Technical Information of SI7774DP-T1-GE3
Manufacturer Part Number SI7774DP-T1-GE3 Category Discrete Semiconductor
Manufacturer Electro-Films (EFI) / Vishay Description MOSFET N-CH 30V 60A PPAK SO-8
Package / Case Cut Tape (CT) Quantity Available 2683 pcs
Vgs(th) (Max) @ Id 2.2V @ 250µA Vgs (Max) ±20V
Technology MOSFET (Metal Oxide) Supplier Device Package PowerPAK® SO-8
Series SkyFET®, TrenchFET® Rds On (Max) @ Id, Vgs 3.8 mOhm @ 15A, 10V
Power Dissipation (Max) 5W (Ta), 48W (Tc) Packaging Cut Tape (CT)
Package / Case PowerPAK® SO-8 Other Names SI7774DP-T1-GE3CT
Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount
Moisture Sensitivity Level (MSL) 1 (Unlimited) Lead Free Status / RoHS Status Lead free / RoHS Compliant
Input Capacitance (Ciss) (Max) @ Vds 2630pF @ 15V Gate Charge (Qg) (Max) @ Vgs 66nC @ 10V
FET Type N-Channel FET Feature -
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Drain to Source Voltage (Vdss) 30V
Detailed Description N-Channel 30V 60A (Tc) 5W (Ta), 48W (Tc) Surface Mount PowerPAK® SO-8 Current - Continuous Drain (Id) @ 25°C 60A (Tc)
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