SI7794DP-T1-GE3 | |
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Part Number | SI7794DP-T1-GE3 |
Manufacturer | Vishay Siliconix |
Description | MOSFET N-CH 30V 28.6A/60A PPAK |
Quantity Available | 3011 pcs new original in stock. Request Stock & Quotation |
ECAD Model | |
Datasheets | 1.SI7794DP-T1-GE3.pdf2.SI7794DP-T1-GE3.pdf |
Download | SI7794DP-T1-GE3 Details PDF |
SI7794DP-T1-GE3 Price |
Request Price & Lead Time Online or Email us: Info@ariat-tech.com |
Technical Information of SI7794DP-T1-GE3 | |||
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Manufacturer Part Number | SI7794DP-T1-GE3 | Category | |
Manufacturer | Electro-Films (EFI) / Vishay | Description | MOSFET N-CH 30V 28.6A/60A PPAK |
Package / Case | PowerPAK® SO-8 | Quantity Available | 3011 pcs |
Vgs(th) (Max) @ Id | 2.5V @ 250µA | Vgs (Max) | ±20V |
Technology | MOSFET (Metal Oxide) | Supplier Device Package | PowerPAK® SO-8 |
Series | SkyFET®, TrenchFET® Gen III | Rds On (Max) @ Id, Vgs | 3.4mOhm @ 20A, 10V |
Power Dissipation (Max) | 5W (Ta), 48W (Tc) | Package / Case | PowerPAK® SO-8 |
Package | Tape & Reel (TR) | Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount | Input Capacitance (Ciss) (Max) @ Vds | 2520 pF @ 15 V |
Gate Charge (Qg) (Max) @ Vgs | 72 nC @ 10 V | FET Type | N-Channel |
FET Feature | Schottky Diode (Body) | Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
Drain to Source Voltage (Vdss) | 30 V | Current - Continuous Drain (Id) @ 25°C | 28.6A (Ta), 60A (Tc) |
Base Product Number | SI7794 | ||
Download | SI7794DP-T1-GE3 PDF - DE.pdfSI7794DP-T1-GE3 PDF - FR.pdfSI7794DP-T1-GE3 PDF - ES.pdfSI7794DP-T1-GE3 PDF - IT.pdfSI7794DP-T1-GE3 PDF - KR.pdf |
SI7794DP-T1-GE3 Stock | SI7794DP-T1-GE3 Price | SI7794DP-T1-GE3 Electronics | |||
SI7794DP-T1-GE3 Components | SI7794DP-T1-GE3 Inventory | SI7794DP-T1-GE3 Digikey | |||
Supplier SI7794DP-T1-GE3 | Order SI7794DP-T1-GE3 Online | Inquiry SI7794DP-T1-GE3 | |||
SI7794DP-T1-GE3 Image | SI7794DP-T1-GE3 Picture | SI7794DP-T1-GE3 PDF | |||
SI7794DP-T1-GE3 Datasheet | Download SI7794DP-T1-GE3 Datasheet | Manufacturer Electro-Films (EFI) / Vishay |
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