SI7742DP-T1-GE3
Part Number SI7742DP-T1-GE3
Manufacturer Electro-Films (EFI) / Vishay
Description MOSFET N-CH 30V 60A PPAK SO-8
Quantity Available 3037 pcs new original in stock.
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Datasheets SI7742DP-T1-GE3.pdf
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Technical Information of SI7742DP-T1-GE3
Manufacturer Part Number SI7742DP-T1-GE3 Category Discrete Semiconductor
Manufacturer Electro-Films (EFI) / Vishay Description MOSFET N-CH 30V 60A PPAK SO-8
Package / Case Tape & Reel (TR) Quantity Available 3037 pcs
Vgs(th) (Max) @ Id 2.7V @ 250µA Vgs (Max) ±20V
Technology MOSFET (Metal Oxide) Supplier Device Package PowerPAK® SO-8
Series SkyFET®, TrenchFET® Rds On (Max) @ Id, Vgs 3.5 mOhm @ 20A, 10V
Power Dissipation (Max) 5.4W (Ta), 83W (Tc) Packaging Tape & Reel (TR)
Package / Case PowerPAK® SO-8 Other Names SI7742DP-T1-GE3TR
SI7742DPT1GE3
Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount
Moisture Sensitivity Level (MSL) 1 (Unlimited) Lead Free Status / RoHS Status Lead free / RoHS Compliant
Input Capacitance (Ciss) (Max) @ Vds 5300pF @ 15V Gate Charge (Qg) (Max) @ Vgs 115nC @ 10V
FET Type N-Channel FET Feature -
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Drain to Source Voltage (Vdss) 30V
Detailed Description N-Channel 30V 60A (Tc) 5.4W (Ta), 83W (Tc) Surface Mount PowerPAK® SO-8 Current - Continuous Drain (Id) @ 25°C 60A (Tc)
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