| SI7772DP-T1-GE3 | |
|---|---|
| Part Number | SI7772DP-T1-GE3 |
| Manufacturer | Electro-Films (EFI) / Vishay |
| Description | MOSFET N-CH 30V 35.6A PPAK SO-8 |
| Quantity Available | 17565 pcs new original in stock. Request Stock & Quotation |
| ECAD Model | |
| Datasheets | |
| Download | SI7772DP-T1-GE3 Details PDF |
| SI7772DP-T1-GE3 Price |
Request Price & Lead Time Online or Email us: Info@ariat-tech.com |
| Technical Information of SI7772DP-T1-GE3 | |||
|---|---|---|---|
| Manufacturer Part Number | SI7772DP-T1-GE3 | Category | Discrete Semiconductor |
| Manufacturer | Electro-Films (EFI) / Vishay | Description | MOSFET N-CH 30V 35.6A PPAK SO-8 |
| Package / Case | Digi-Reel® | Quantity Available | 17565 pcs |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA | Vgs (Max) | ±20V |
| Technology | MOSFET (Metal Oxide) | Supplier Device Package | PowerPAK® SO-8 |
| Series | SkyFET®, TrenchFET® | Rds On (Max) @ Id, Vgs | 13 mOhm @ 15A, 10V |
| Power Dissipation (Max) | 3.9W (Ta), 29.8W (Tc) | Packaging | Original-Reel® |
| Package / Case | PowerPAK® SO-8 | Other Names | SI7772DP-T1-GE3DKR |
| Operating Temperature | -55°C ~ 150°C (TJ) | Mounting Type | Surface Mount |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
| Input Capacitance (Ciss) (Max) @ Vds | 1084pF @ 15V | Gate Charge (Qg) (Max) @ Vgs | 28nC @ 10V |
| FET Type | N-Channel | FET Feature | - |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V | Drain to Source Voltage (Vdss) | 30V |
| Detailed Description | N-Channel 30V 35.6A (Tc) 3.9W (Ta), 29.8W (Tc) Surface Mount PowerPAK® SO-8 | Current - Continuous Drain (Id) @ 25°C | 35.6A (Tc) |
| Download | SI7772DP-T1-GE3 PDF - DE.pdfSI7772DP-T1-GE3 PDF - FR.pdfSI7772DP-T1-GE3 PDF - ES.pdfSI7772DP-T1-GE3 PDF - IT.pdfSI7772DP-T1-GE3 PDF - KR.pdf | ||
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| SI7772DP-T1-GE3 Datasheet | Download SI7772DP-T1-GE3 Datasheet | Manufacturer Electro-Films (EFI) / Vishay |
