SI7802DN-T1-GE3
Part Number SI7802DN-T1-GE3
Manufacturer Electro-Films (EFI) / Vishay
Description MOSFET N-CH 250V 1.24A 1212-8
Quantity Available 2909 pcs new original in stock.
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Technical Information of SI7802DN-T1-GE3
Manufacturer Part Number SI7802DN-T1-GE3 Category Discrete Semiconductor
Manufacturer Electro-Films (EFI) / Vishay Description MOSFET N-CH 250V 1.24A 1212-8
Package / Case Tape & Reel (TR) Quantity Available 2909 pcs
Vgs(th) (Max) @ Id 3.6V @ 250µA Vgs (Max) ±20V
Technology MOSFET (Metal Oxide) Supplier Device Package PowerPAK® 1212-8
Series TrenchFET® Rds On (Max) @ Id, Vgs 435 mOhm @ 1.95A, 10V
Power Dissipation (Max) 1.5W (Ta) Packaging Tape & Reel (TR)
Package / Case PowerPAK® 1212-8 Other Names SI7802DN-T1-GE3TR
SI7802DNT1GE3
Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount
Moisture Sensitivity Level (MSL) 1 (Unlimited) Lead Free Status / RoHS Status Lead free / RoHS Compliant
Gate Charge (Qg) (Max) @ Vgs 21nC @ 10V FET Type N-Channel
FET Feature - Drive Voltage (Max Rds On, Min Rds On) 6V, 10V
Drain to Source Voltage (Vdss) 250V Detailed Description N-Channel 250V 1.24A (Ta) 1.5W (Ta) Surface Mount PowerPAK® 1212-8
Current - Continuous Drain (Id) @ 25°C 1.24A (Ta)  
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