TP65H150G4LSG-TR
Part Number TP65H150G4LSG-TR
Manufacturer Transphorm
Description 650 V 13 A GAN FET
Quantity Available 2916 pcs new original in stock.
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Technical Information of TP65H150G4LSG-TR
Manufacturer Part Number TP65H150G4LSG-TR Category Discrete Semiconductor
Manufacturer Transphorm Description 650 V 13 A GAN FET
Package / Case 2-PQFN (8x8) Quantity Available 2916 pcs
Vgs(th) (Max) @ Id 4.8V @ 500µA Vgs (Max) ±20V
Technology GaNFET (Gallium Nitride) Supplier Device Package 2-PQFN (8x8)
Series - Rds On (Max) @ Id, Vgs 180mOhm @ 8.5A, 10V
Power Dissipation (Max) 52W (Tc) Package / Case 2-PowerTSFN
Package Tape & Reel (TR) Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Input Capacitance (Ciss) (Max) @ Vds 598 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs 8 nC @ 10 V FET Type N-Channel
FET Feature - Drive Voltage (Max Rds On, Min Rds On) 10V
Drain to Source Voltage (Vdss) 650 V Current - Continuous Drain (Id) @ 25°C 13A (Tc)
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