TP65H015G5WS
Part Number TP65H015G5WS
Manufacturer Transphorm
Description 650 V 95 A GAN FET
Quantity Available 263 pcs in stock
ECAD Model
Datasheets TP65H015G5WS.pdf
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Technical Information of TP65H015G5WS
Manufacturer Part Number TP65H015G5WS Category Discrete Semiconductor
Manufacturer Transphorm Description 650 V 95 A GAN FET
Package / Case TO-247-3 Quantity Available 263 pcs
Vgs(th) (Max) @ Id 4.8V @ 2mA Vgs (Max) ±20V
Technology GaNFET (Gallium Nitride) Supplier Device Package TO-247-3
Series SuperGaN™ Rds On (Max) @ Id, Vgs 18mOhm @ 60A, 10V
Power Dissipation (Max) 266W (Tc) Package / Case TO-247-3
Package Tube Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole Input Capacitance (Ciss) (Max) @ Vds 5218 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs 100 nC @ 10 V FET Type N-Channel
FET Feature - Drive Voltage (Max Rds On, Min Rds On) 10V
Drain to Source Voltage (Vdss) 650 V Current - Continuous Drain (Id) @ 25°C 93A (Tc)
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