TP65H035G4WSQA
Part Number TP65H035G4WSQA
Manufacturer Transphorm
Description 650 V 46.5 GAN FET
Quantity Available 424 pcs in stock
ECAD Model
Datasheets TP65H035G4WSQA.pdf
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Technical Information of TP65H035G4WSQA
Manufacturer Part Number TP65H035G4WSQA Category Discrete Semiconductor
Manufacturer Transphorm Description 650 V 46.5 GAN FET
Package / Case TO-247-3 Quantity Available 424 pcs
Vgs(th) (Max) @ Id 4.8V @ 1mA Vgs (Max) ±20V
Technology GaNFET (Gallium Nitride) Supplier Device Package TO-247-3
Series Automotive, AEC-Q101 Rds On (Max) @ Id, Vgs 41mOhm @ 30A, 10V
Power Dissipation (Max) 187W (Tc) Package / Case TO-247-3
Package Tube Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Through Hole Input Capacitance (Ciss) (Max) @ Vds 1500 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs 22 nC @ 10 V FET Type N-Channel
FET Feature - Drive Voltage (Max Rds On, Min Rds On) 10V
Drain to Source Voltage (Vdss) 650 V Current - Continuous Drain (Id) @ 25°C 47.2A (Tc)
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