TP65H070LDG
Part Number TP65H070LDG
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Description GANFET N-CH 650V 25A 3PQFN
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Technical Information of TP65H070LDG
Manufacturer Part Number TP65H070LDG Category Discrete Semiconductor
Manufacturer Transphorm Description GANFET N-CH 650V 25A 3PQFN
Package / Case 3-PQFN (8x8) Quantity Available Available Stock
Vgs(th) (Max) @ Id 4.8V @ 700µA Vgs (Max) ±20V
Technology GaNFET (Cascode Gallium Nitride FET) Supplier Device Package 3-PQFN (8x8)
Series TP65H070L Rds On (Max) @ Id, Vgs 85mOhm @ 16A, 10V
Power Dissipation (Max) 96W (Tc) Package / Case 3-PowerDFN
Package Tube Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Input Capacitance (Ciss) (Max) @ Vds 600 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs 9.3 nC @ 10 V FET Type N-Channel
FET Feature - Drive Voltage (Max Rds On, Min Rds On) 10V
Drain to Source Voltage (Vdss) 650 V Current - Continuous Drain (Id) @ 25°C 25A (Tc)
Base Product Number TP65H070  
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