SIR470DP-T1-GE3
Part Number SIR470DP-T1-GE3
Manufacturer Vishay Siliconix
Description MOSFET N-CH 40V 60A PPAK SO-8
Quantity Available 31246 pcs new original in stock.
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Datasheets 1.SIR470DP-T1-GE3.pdf2.SIR470DP-T1-GE3.pdf3.SIR470DP-T1-GE3.pdf4.SIR470DP-T1-GE3.pdf
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Technical Information of SIR470DP-T1-GE3
Manufacturer Part Number SIR470DP-T1-GE3 Category  
Manufacturer Vishay / Siliconix Description MOSFET N-CH 40V 60A PPAK SO-8
Package / Case PowerPAK® SO-8 Quantity Available 31246 pcs
Vgs(th) (Max) @ Id 2.5V @ 250µA Vgs (Max) ±20V
Technology MOSFET (Metal Oxide) Supplier Device Package PowerPAK® SO-8
Series TrenchFET® Rds On (Max) @ Id, Vgs 2.3mOhm @ 20A, 10V
Power Dissipation (Max) 6.25W (Ta), 104W (Tc) Package / Case PowerPAK® SO-8
Package Tape & Reel (TR) Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Input Capacitance (Ciss) (Max) @ Vds 5660 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs 155 nC @ 10 V FET Type N-Channel
FET Feature - Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Drain to Source Voltage (Vdss) 40 V Current - Continuous Drain (Id) @ 25°C 60A (Tc)
Base Product Number SIR470  
DownloadSIR470DP-T1-GE3 PDF - DE.pdfSIR470DP-T1-GE3 PDF - FR.pdfSIR470DP-T1-GE3 PDF - ES.pdfSIR470DP-T1-GE3 PDF - IT.pdfSIR470DP-T1-GE3 PDF - KR.pdf

Product Model

SIR470DP-T1-GE3

Introduction

High-performance N-Channel TrenchFET Power MOSFET

Brand and Manufacturer

Vishay / Siliconix

Features

MOSFET (Metal Oxide) technology

N-Channel type

Tape & Reel (TR) packaging for automatic assembly

Surface Mount Technology (SMT) compatible

RoHS compliant for environmental safety

Lead-free for reduced toxicity

Product Performance

Drain to Source Voltage (Vdss) 40V support

Continuous Drain Current (Id) 60A at 25°C (Tc)

Low On-state resistance Rds On 2.3 mOhm at 20A, 10V

Gate Charge (Qg) of 155nC at 10V

Input Capacitance (Ciss) of 5660pF at 20V

Capable of withstanding high temperatures up to 150°C (TJ)

Technical Specifications

Power Dissipation 6.25W (Ta), 104W (Tc)

Gate Threshold Voltage (Vgs(th)) 2.5V at 250A

Drive Voltage 4.5V (Max Rds On), 10V (Min Rds On)

Gate-Source Voltage (Vgs max) ±20V

Dimensions, Shape, and Packaging

PowerPAK SO-8 package

Supplier Device Package PowerPAK SO-8

Packaged in Tape & Reel (TR) for efficient assembly processes

Quality and Reliability

Constructed by reputable Vishay / Siliconix

Robust build for sustained performance

Product Advantages

High drain current capability

Enhanced power efficiency with low Rds On

Suitable for high-density power applications

Product Competitiveness

Competitive in the field of high-performance discrete semiconductors

Offers a balance of price and performance

Compatibility

Compatible with standard SMT manufacturing processes

Fits PowerPAK SO-8 standard footprints and assembly techniques

Standard Certification and Compliance

RoHS compliant for environmental and consumer safety

Lifespan and Sustainability

Designed for long operational life under specified conditions

Actual Application Fields

Power management for computing and networking equipment

DC/DC converters

Motor drives

Battery powered systems

Switching applications requiring efficient energy control

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