SIR470DP-T1-GE3 | |
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Part Number | SIR470DP-T1-GE3 |
Manufacturer | Vishay Siliconix |
Description | MOSFET N-CH 40V 60A PPAK SO-8 |
Quantity Available | 31246 pcs new original in stock. Request Stock & Quotation |
ECAD Model | |
Datasheets | 1.SIR470DP-T1-GE3.pdf2.SIR470DP-T1-GE3.pdf3.SIR470DP-T1-GE3.pdf4.SIR470DP-T1-GE3.pdf |
Download | SIR470DP-T1-GE3 Details PDF |
SIR470DP-T1-GE3 Price |
Request Price & Lead Time Online or Email us: Info@ariat-tech.com |
Technical Information of SIR470DP-T1-GE3 | |||
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Manufacturer Part Number | SIR470DP-T1-GE3 | Category | |
Manufacturer | Vishay / Siliconix | Description | MOSFET N-CH 40V 60A PPAK SO-8 |
Package / Case | PowerPAK® SO-8 | Quantity Available | 31246 pcs |
Vgs(th) (Max) @ Id | 2.5V @ 250µA | Vgs (Max) | ±20V |
Technology | MOSFET (Metal Oxide) | Supplier Device Package | PowerPAK® SO-8 |
Series | TrenchFET® | Rds On (Max) @ Id, Vgs | 2.3mOhm @ 20A, 10V |
Power Dissipation (Max) | 6.25W (Ta), 104W (Tc) | Package / Case | PowerPAK® SO-8 |
Package | Tape & Reel (TR) | Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount | Input Capacitance (Ciss) (Max) @ Vds | 5660 pF @ 20 V |
Gate Charge (Qg) (Max) @ Vgs | 155 nC @ 10 V | FET Type | N-Channel |
FET Feature | - | Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
Drain to Source Voltage (Vdss) | 40 V | Current - Continuous Drain (Id) @ 25°C | 60A (Tc) |
Base Product Number | SIR470 | ||
Download | SIR470DP-T1-GE3 PDF - DE.pdfSIR470DP-T1-GE3 PDF - FR.pdfSIR470DP-T1-GE3 PDF - ES.pdfSIR470DP-T1-GE3 PDF - IT.pdfSIR470DP-T1-GE3 PDF - KR.pdf |
SIR470DP-T1-GE3
High-performance N-Channel TrenchFET Power MOSFET
Vishay / Siliconix
MOSFET (Metal Oxide) technology
N-Channel type
Tape & Reel (TR) packaging for automatic assembly
Surface Mount Technology (SMT) compatible
RoHS compliant for environmental safety
Lead-free for reduced toxicity
Drain to Source Voltage (Vdss) 40V support
Continuous Drain Current (Id) 60A at 25°C (Tc)
Low On-state resistance Rds On 2.3 mOhm at 20A, 10V
Gate Charge (Qg) of 155nC at 10V
Input Capacitance (Ciss) of 5660pF at 20V
Capable of withstanding high temperatures up to 150°C (TJ)
Power Dissipation 6.25W (Ta), 104W (Tc)
Gate Threshold Voltage (Vgs(th)) 2.5V at 250A
Drive Voltage 4.5V (Max Rds On), 10V (Min Rds On)
Gate-Source Voltage (Vgs max) ±20V
PowerPAK SO-8 package
Supplier Device Package PowerPAK SO-8
Packaged in Tape & Reel (TR) for efficient assembly processes
Constructed by reputable Vishay / Siliconix
Robust build for sustained performance
High drain current capability
Enhanced power efficiency with low Rds On
Suitable for high-density power applications
Competitive in the field of high-performance discrete semiconductors
Offers a balance of price and performance
Compatible with standard SMT manufacturing processes
Fits PowerPAK SO-8 standard footprints and assembly techniques
RoHS compliant for environmental and consumer safety
Designed for long operational life under specified conditions
Power management for computing and networking equipment
DC/DC converters
Motor drives
Battery powered systems
Switching applications requiring efficient energy control
SIR470DP-T1-GE3 Stock | SIR470DP-T1-GE3 Price | SIR470DP-T1-GE3 Electronics | |||
SIR470DP-T1-GE3 Components | SIR470DP-T1-GE3 Inventory | SIR470DP-T1-GE3 Digikey | |||
Supplier SIR470DP-T1-GE3 | Order SIR470DP-T1-GE3 Online | Inquiry SIR470DP-T1-GE3 | |||
SIR470DP-T1-GE3 Image | SIR470DP-T1-GE3 Picture | SIR470DP-T1-GE3 PDF | |||
SIR470DP-T1-GE3 Datasheet | Download SIR470DP-T1-GE3 Datasheet | Manufacturer Vishay / Siliconix |
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