| SIR474DP-T1-GE3 | |
|---|---|
| Part Number | SIR474DP-T1-GE3 |
| Manufacturer | Electro-Films (EFI) / Vishay |
| Description | MOSFET N-CH 30V 20A PPAK SO-8 |
| Quantity Available | 106757 pcs new original in stock. Request Stock & Quotation |
| ECAD Model | |
| Datasheets | |
| Download | SIR474DP-T1-GE3 Details PDF |
| SIR474DP-T1-GE3 Price |
Request Price & Lead Time Online or Email us: Info@ariat-tech.com |
| Technical Information of SIR474DP-T1-GE3 | |||
|---|---|---|---|
| Manufacturer Part Number | SIR474DP-T1-GE3 | Category | Discrete Semiconductor |
| Manufacturer | Electro-Films (EFI) / Vishay | Description | MOSFET N-CH 30V 20A PPAK SO-8 |
| Package / Case | Cut Tape (CT) | Quantity Available | 106757 pcs |
| Vgs(th) (Max) @ Id | 2.2V @ 250µA | Vgs (Max) | ±20V |
| Technology | MOSFET (Metal Oxide) | Series | TrenchFET® |
| Rds On (Max) @ Id, Vgs | 9.5 mOhm @ 10A, 10V | Power Dissipation (Max) | 3.9W (Ta), 29.8W (Tc) |
| Packaging | Cut Tape (CT) | Package / Case | PowerPAK® SO-8 |
| Other Names | SIR474DP-T1-GE3CT | Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount | Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Manufacturer Standard Lead Time | 27 Weeks | Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
| Input Capacitance (Ciss) (Max) @ Vds | 985pF @ 15V | Gate Charge (Qg) (Max) @ Vgs | 27nC @ 10V |
| FET Type | N-Channel | FET Feature | - |
| Drive Voltage (Max Rds On, Min Rds On) | 10V | Drain to Source Voltage (Vdss) | 30V |
| Detailed Description | N-Channel 30V 20A (Tc) 3.9W (Ta), 29.8W (Tc) Surface Mount | Current - Continuous Drain (Id) @ 25°C | 20A (Tc) |
| Download | SIR474DP-T1-GE3 PDF - DE.pdfSIR474DP-T1-GE3 PDF - FR.pdfSIR474DP-T1-GE3 PDF - ES.pdfSIR474DP-T1-GE3 PDF - IT.pdfSIR474DP-T1-GE3 PDF - KR.pdf | ||
Product Model
SIR474DP-T1-GE3
Introduction
N-Channel 30V 20A MOSFET
Brand and Manufacturer
Electro-Films (EFI) / Vishay
Features
Metal Oxide Semiconductor Field-Effect Transistor
N-Channel
High density power MOSFET
Low Rds(on)
Product Performance
Can handle continuous drain current up to 20A
Operates at temperatures ranging from -55°C to 150°C
Surface Mount Technology
Maximum drain to source voltage of 30V
Technical Specifications
FET Type: N-Channel
Rds On (Max): 9.5 mOhm at 10A, 10V
Gate Charge (Qg) (Max): 27nC at 10V
Input Capacitance (Ciss) (Max): 985pF at 15V
Dimensions, Shape, and Packaging
PowerPAK SO-8 Package
Packaged in Cut Tape (CT) for surface mount
Moisture Sensitivity Level (MSL): 1
Quality and Reliability
RoHS Compliant for lead-free construction
Highly reliable for industrial applications
Product Advantages
Optimized for low threshold voltage and high efficiency
Enhanced thermal performance due to power dissipation capability
Product Competitiveness
Competitive in high switching speeds and power management applications
Attractive for compact designs with space constraints
Compatibility
Compatible with a broad range of gate drive voltages (10Vmax recommended)
Excellent for high-performance computing and consumer electronics
Standard Certification and Compliance
Lead Free Status / RoHS Status compliant
Lifespan and Sustainability
Durable under extended operating temperatures and appropriate for long-term usage
Sustainability in design with lead-free constituents
Actual Application Fields
Power Supply Circuits
DC-DC Converters
Motor Controls
Computing Systems
Portable Devices
Email us: Info@Ariat-Tech.com or RFQ SIR474DP-T1-GE3 Online.
| SIR474DP-T1-GE3 Stock | SIR474DP-T1-GE3 Price | SIR474DP-T1-GE3 Electronics | |||
| SIR474DP-T1-GE3 Components | SIR474DP-T1-GE3 Inventory | SIR474DP-T1-GE3 Digikey | |||
| Supplier SIR474DP-T1-GE3 | Order SIR474DP-T1-GE3 Online | Inquiry SIR474DP-T1-GE3 | |||
| SIR474DP-T1-GE3 Image | SIR474DP-T1-GE3 Picture | SIR474DP-T1-GE3 PDF | |||
| SIR474DP-T1-GE3 Datasheet | Download SIR474DP-T1-GE3 Datasheet | Manufacturer Electro-Films (EFI) / Vishay | |||
| Related parts for SIR474DP-T1-GE3 | |||||
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