| SSM3J168F,LF | |
|---|---|
| Part Number | SSM3J168F,LF |
| Manufacturer | Toshiba Semiconductor and Storage |
| Description | MOSFET P-CH 60V 400MA S-MINI |
| Quantity Available | 2519 pcs new original in stock. Request Stock & Quotation |
| ECAD Model | |
| Datasheets | SSM3J168F,LF.pdf |
| Download | SSM3J168F,LF Details PDF |
| SSM3J168F,LF Price |
Request Price & Lead Time Online or Email us: Info@ariat-tech.com |
| Technical Information of SSM3J168F,LF | |||
|---|---|---|---|
| Manufacturer Part Number | SSM3J168F,LF | Category | |
| Manufacturer | TAEC Product (Toshiba Electronic Devices and Storage Corporation) | Description | MOSFET P-CH 60V 400MA S-MINI |
| Package / Case | SOT-23-3 | Quantity Available | 2519 pcs |
| Vgs(th) (Max) @ Id | 2V @ 1mA | Vgs (Max) | +20V, -16V |
| Technology | MOSFET (Metal Oxide) | Supplier Device Package | SOT-23-3 |
| Series | U-MOSVI | Rds On (Max) @ Id, Vgs | 1.9Ohm @ 100mA, 4.5V |
| Power Dissipation (Max) | 1.2W (Ta) | Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Package | Tape & Reel (TR) | Operating Temperature | 150°C |
| Mounting Type | Surface Mount | Input Capacitance (Ciss) (Max) @ Vds | 82 pF @ 10 V |
| Gate Charge (Qg) (Max) @ Vgs | 3 nC @ 10 V | FET Type | P-Channel |
| FET Feature | - | Drive Voltage (Max Rds On, Min Rds On) | 4V, 10V |
| Drain to Source Voltage (Vdss) | 60 V | Current - Continuous Drain (Id) @ 25°C | 400mA (Ta) |
| Base Product Number | SSM3J168 | ||
| Download | SSM3J168F,LF PDF - DE.pdf | ||
Product Model
SSM3J168F,LF
Introduction
P-Channel MOSFET designed for power management and switching
Brand and Manufacturer
Toshiba Semiconductor and Storage
Features
P-Channel, 60V, 400mA
Low on-resistance
High-speed switching
Low drive voltage
Product Performance
1.2W power dissipation
High reliability under high-speed switching
Low gate charge for efficient operation
Technical Specifications
60V drain-source voltage (Vds)
400mA drain current (Id)
1.9 Ohm static drain-source on-resistance (Rds(on)) at 100mA, 4.5V
82pF gate charge (Qg) at 10V
3nC total gate charge (Qg)
2V gate-source threshold voltage (Vgs(th)) at 1mA
20V forward gate-source voltage (Vgs) max
16V reverse gate-source voltage (Vgs) max
Dimensions, Shape, and Packaging
TO-236-3, SC-59, SOT-23-3 package
Supplied in Tape & Reel (TR) for automated assembly
Moisture Sensitivity Level (MSL) 1
Quality and Reliability
Lead free and RoHS compliant
High moisture resistance
Product Advantages
Enhanced thermal performance for size
Suitable for low-voltage drive applications
Product Competitiveness
High-speed switching capabilities
Energy-efficient operation
Compatibility
Compatible with surface mount technology (SMT)
Standard Certification and Compliance
Lead free / RoHS Compliant
Lifespan and Sustainability
Designed for long-term reliability
Environmental friendly materials and production
Actual Application Fields
Power management systems
Switching applications
Portable devices
Power supplies
Email us: Info@Ariat-Tech.com or RFQ SSM3J168F,LF Online.
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| SSM3J168F,LF Image | SSM3J168F,LF Picture | SSM3J168F,LF PDF | |||
| SSM3J168F,LF Datasheet | Download SSM3J168F,LF Datasheet | Manufacturer TAEC Product (Toshiba Electronic Devices and Storage Corporation) | |||
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