Product Model

SSM3J109TU(TE85L)

Introduction

A specialized integrated circuit designed for specific applications, developed by Toshiba Semiconductor and Storage.

Brand and manufacturer

Toshiba Semiconductor and Storage

Features

Low on-resistance

High-speed switching

Low gate charge

Low drive current requirement

Product Performance

Efficient performance due to low on-resistance and high-speed switching capabilities

Stable operation within a wide range of temperatures

Technical Specifications

Power MOSFET, N-Channel, Single

Drain to Source Voltage (Vdss): 100V

Continuous Drain Current (Id): 1A

Power Dissipation: 1W

Rds On (Max) @ Id, Vgs: 800 mOhm @ 500mA, 10V

Dimensions, Shape, and Packaging

Compact surface mount package

Package: SOT-416FL

Dimensions: 2mm x 1.25mm x 0.98mm

Quality and Reliability

Designed for longevity and stable performance under various electrical and environmental conditions

Product Advantages

Optimized for low voltage and low current applications

Enhances overall efficiency of electronic circuits

Product Competitiveness

Competitive edge in applications requiring low power loss and high efficiency

Compatibility

Compatible with existing standard circuit assembly techniques

Standard Certification and Compliance

Complies with major international electronic and environmental standards

Lifespan and Sustainability

Designed for long operational life with minimal degradation over time

Eco-friendly components and packaging

Actual Application Fields

Power management applications

DC/DC converters

Load switches

Battery management systems

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