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Home Products Discrete Semiconductor Transistors - Bipolar (BJT) - Single, Pre-Biased RN1106MFV,L3XHF(CT
RN1106MFV,L3XHF(CT
Part Number RN1106MFV,L3XHF(CT
Manufacturer Toshiba Semiconductor and Storage
Description AUTO AEC-Q NPN Q1BSR=4.7K, Q1BER
Quantity Available 8000 pcs new original in stock.
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Technical Information of RN1106MFV,L3XHF(CT
Manufacturer Part Number RN1106MFV,L3XHF(CT Category Discrete Semiconductor
Manufacturer TAEC Product (Toshiba Electronic Devices and Storage Corporation) Description AUTO AEC-Q NPN Q1BSR=4.7K, Q1BER
Package / Case VESM Quantity Available 8000 pcs
Voltage - Collector Emitter Breakdown (Max) 50 V Vce Saturation (Max) @ Ib, Ic 300mV @ 500µA, 5mA
Transistor Type NPN - Pre-Biased Supplier Device Package VESM
Series Automotive, AEC-Q101 Resistor - Emitter Base (R2) 47 kOhms
Resistor - Base (R1) 4.7 kOhms Power - Max 150 mW
Package / Case SOT-723 Package Tape & Reel (TR)
Mounting Type Surface Mount DC Current Gain (hFE) (Min) @ Ic, Vce 80 @ 1mA, 5V
Current - Collector Cutoff (Max) 500nA Current - Collector (Ic) (Max) 100 mA
Base Product Number RN1106  
RN1106MFV,L3XHF(CT are New and Original in Stock, Find RN1106MFV,L3XHF(CT electronics components stock, Datasheet, Inventory and Price at Ariat-Tech.com Online, Order RN1106MFV,L3XHF(CT Toshiba Semiconductor and Storage with warrantied and confidence from Ariat Technology Limitd. Ship via DHL/FedEx/UPS. Payment with Wire Transfer or PayPal is OK.
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