BSM400D12P2G003
Part Number BSM400D12P2G003
Manufacturer Rohm Semiconductor
Description SILICON CARBIDE POWER MODULE. B
Quantity Available 4 pcs in stock
ECAD Model
Datasheets
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Technical Information of BSM400D12P2G003
Manufacturer Part Number BSM400D12P2G003 Category Discrete Semiconductor
Manufacturer LAPIS Technology Description SILICON CARBIDE POWER MODULE. B
Package / Case module Quantity Available 4 pcs
Vgs(th) (Max) @ Id 4V @ 85mA Technology Silicon Carbide (SiC)
Supplier Device Package Module Series -
Rds On (Max) @ Id, Vgs - Power - Max 2450W (Tc)
Package / Case Module Package Bulk
Operating Temperature -40°C ~ 150°C (TJ) Input Capacitance (Ciss) (Max) @ Vds 38000pF @ 10V
Gate Charge (Qg) (Max) @ Vgs - FET Feature -
Drain to Source Voltage (Vdss) 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C 400A (Tc)
Configuration 2 N-Channel (Half Bridge) Base Product Number BSM400
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