Product Model

SKT760/18E

Introduction

IGBT (Insulated Gate Bipolar Transistor) module designed for high efficiency and performance in power electronic applications.

Brand and manufacturer

IGBT Module

Features

High current capacity

Low on-state voltage drop

Fast switching speed

High efficiency

Gate drive voltage optimized for minimal power loss

Product performance

Capable of handling high voltage and current

Low thermal resistance

Enhanced durability and reliability under extreme conditions

Robust against electrical stress

Technical specifications

Type: IGBT Module

Configuration: Single

Collector-Emitter Voltage: 1800 V

Collector Current: 760 A

Gate-Emitter Voltage: +/- 20 V

Dimensions, shape, and packaging

Rectangular module

Standard industry packaging

Designed for easy installation and handling

Quality and reliability

Built to withstand rigorous industrial environments

High reliability in continuous operation

Tested for long-term durability

Product advantages

Improved power handling capabilities

Enhanced thermal management

Reduced energy losses

Product competitiveness

Competes well in markets requiring high power density and efficiency

Favored in applications demanding reliability and robustness

Compatibility

Compatible with standard gate drive voltages

Suitable for various high power electronic assemblies

Standard certification and compliance

Meets industry standards for safety and performance

Compliance with international environmental regulations

Lifespan and sustainability

Designed for long operational life

Materials used are environmentally sustainable

Reduced carbon footprint due to efficient performance

Actual application fields

Industrial motor drives

Renewable energy inverters

Electric vehicle power systems

Power management systems for large-scale industrial equipment

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