Product Model

QM800HA24B

Introduction

IGBT Module

Brand and Manufacturer

Mitsubishi Electric Semiconductor

Features

High-efficiency IGBT technology

Low power loss

High-speed switching capability

Integrated diode for freewheeling applications

Product Performance

Enhanced thermal performance

Improved electrical efficiency

Durable under high-frequency operations

Capable of handling high power and voltage

Technical Specifications

Type: IGBT Module

Configuration: Dual

Collector-Emitter Voltage: 1200 V

Collector Current: 800 A

Dimensions, Shape, and Packaging

Rectangular module

Standard industrial packaging

Dimensions tailored for compact installation

Quality and Reliability

High reliability under extreme conditions

Long operational life

Rigorous quality testing standards

Product Advantages

Reduced energy consumption

Lower operational costs due to efficiency

High power output

Product Competitiveness

Leading performance in high-power applications

Competitive in markets requiring high reliability and efficiency

Compatibility

Compatible with standard IGBT drivers and systems

Flexible integration into existing setups

Standard Certification and Compliance

Complies with international semiconductor standards

Certified for safety and environmental impact

Lifespan and Sustainability

Designed for long-term use

Emphasis on low environmental impact through efficient performance

Actual Application Fields

Industrial motor drives

Power generation systems

Renewable energy converters

High-power inverters and converters

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