Product Model

CM600HC-24NFM

Introduction

High Power Switching Use Insulated Gate Bipolar Transistor Module

Brand and Manufacturer

Mitsubishi Electric Semiconductor

Features

High Voltage Capability

Low Power Consumption

High-Speed Switching

Low Drive Power

Integrated Free-Wheeling Diode

Isolated Baseplate

Product Performance

High Thermal Durability

Low On-Resistance

Excellent EMI Performance

Stable Temperature Characteristics

Technical Specifications

Collector-Emitter Voltage: 1200V

Collector Current: 600A

Collector Power Dissipation

Gate-Emitter Voltage

Isolation Voltage

Thermal Resistance

Dimensions, Shape, and Packaging

Module Package

Specific Mounting Size

Module Weight

Packaging Type: Tube or Tray

Quality and Reliability

High MTBF

Durability under High Electrical Stress

Compliance with Industrial Standards

Product Advantages

Energy Saving

Low Losses

Robust Construction

High Current Handling Capacity

Product Competitiveness

Cost-Effectiveness

Superior Performance-to-Size Ratio

Widely Accepted in Industry

Backed by Mitsubishi Reputation

Compatibility

Compatible with Various Drive Circuits

Suitable for Parallel Operation

Wide Range of Applications

Standard Certification and Compliance

UL Recognized

RoHS Compliant

REACH Compliant

Lifespan and Sustainability

Long Operational Life

Eco-Friendly Materials Usage

Designed for recyclability and energy efficiency

Actual Application Fields

Energy Management Systems

Motor Drives

Power Inverters

Railway Traction

Electric Vehicles

Renewable Energy Systems

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