FDN352AP | |
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Part Number | FDN352AP |
Manufacturer | onsemi |
Description | MOSFET P-CH 30V 1.3A SUPERSOT3 |
Quantity Available | 11200 pcs new original in stock. Request Stock & Quotation |
ECAD Model | |
Datasheets | 1.FDN352AP.pdf2.FDN352AP.pdf3.FDN352AP.pdf4.FDN352AP.pdf5.FDN352AP.pdf6.FDN352AP.pdf7.FDN352AP.pdf8.FDN352AP.pdf |
Download | FDN352AP Details PDF |
FDN352AP Price |
Request Price & Lead Time Online or Email us: Info@ariat-tech.com |
Technical Information of FDN352AP | |||
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Manufacturer Part Number | FDN352AP | Category | |
Manufacturer | onsemi | Description | MOSFET P-CH 30V 1.3A SUPERSOT3 |
Package / Case | SOT-23-3 | Quantity Available | 11200 pcs |
Vgs(th) (Max) @ Id | 2.5V @ 250µA | Vgs (Max) | ±25V |
Technology | MOSFET (Metal Oxide) | Supplier Device Package | SOT-23-3 |
Series | PowerTrench® | Rds On (Max) @ Id, Vgs | 180mOhm @ 1.3A, 10V |
Power Dissipation (Max) | 500mW (Ta) | Package / Case | TO-236-3, SC-59, SOT-23-3 |
Package | Tape & Reel (TR) | Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount | Input Capacitance (Ciss) (Max) @ Vds | 150 pF @ 15 V |
Gate Charge (Qg) (Max) @ Vgs | 1.9 nC @ 4.5 V | FET Type | P-Channel |
FET Feature | - | Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
Drain to Source Voltage (Vdss) | 30 V | Current - Continuous Drain (Id) @ 25°C | 1.3A (Ta) |
Base Product Number | FDN352 | ||
Download | FDN352AP PDF - DE.pdfFDN352AP PDF - FR.pdfFDN352AP PDF - ES.pdfFDN352AP PDF - IT.pdfFDN352AP PDF - KR.pdf |
FDN352AP
P-Channel MOSFET for power switching applications
AMI Semiconductor / ON Semiconductor
PowerTrench Technology for Low On-Resistance
P-Channel for High-Side Switching
Compact Surface Mount SuperSOT-3 Package
Efficient Power Dissipation of 500mW
High Continuous Drain Current of 1.3A
Robust Operating Temperature Range -55°C to 150°C
30V Drain to Source Voltage
180 mOhm Rds On at 1.3A and 10V
Low Gate Charge of 1.9nC
High Input Capacitance of 150pF
TO-236-3, SC-59, SOT-23-3 Case
SuperSOT-3 Supplier Device Package
Digi-Reel Packaging
Lead-free and ROHS Compliant
Moisture Sensitivity Level 1
Optimized for Fast Switching
Low Threshold Voltage of 2.5V
Tailored for Battery Management and Load Switch Applications
Designed for Minimal Conduction Losses
Compatible with Logic-Level Drive Sources
Meets Lead-Free and ROHS Environmental Standards
Designed for Long-Term Reliability
Suitable for Extended Lifecycle Applications
Power Management in Portable Devices
DC/DC Converters
Load Switching
Battery Operated Systems
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FDN352AP Image | FDN352AP Picture | FDN352AP PDF | |||
FDN352AP Datasheet | Download FDN352AP Datasheet | Manufacturer |
Related parts for FDN352AP | |||||
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FDN355N | FDN355N FAIRCHILD | FAIRCHILD | ||
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FDN352 IC | SOT-23 | |||
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FDN355A-NL | FDN355A-NL FAIRCHILD | FAIRCHILD | ||
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FDN342P-NL | FDN342P-NL FAIRCHILD | FAIRCHILD | ||
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FDN342P | SMALL SIGNAL FIELD-EFFECT TRANSI | Fairchild Semiconductor | ||
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FDN355N IC | FAIRCHILD SOT-23 | FAIRCHILD | ||
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FDN355A | ON SOT-23 | ON | ||
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FDN351N IC | FAI ON SOT-23 | FAI ON | ||
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FDN351N | FAI ON SOT-23 | FAI ON | ||
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FDN352AP-NL | FDN352AP-NL FAIRCHILD | FAIRCHILD | ||
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FDN352AP-NL MOS | VBSEMI SOT-23T | VBSEMI | ||
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FDN352P-NL | FDN352P-NL VB | VB | ||
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FDN352AP IC | FAIRCHILD SOT23-3 | FAIRCHILD | ||
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FDN342P MOS | FAIRCHILD SOT-23 | FAIRCHILD | ||
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FDN355N MOS | ON SOT-23 | ON | ||
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FDN352AP | SMALL SIGNAL FIELD-EFFECT TRANSI | Fairchild Semiconductor | ||
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FDN352 | ||||
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FDN352AP MOS | FAIRCHILD SOT-23 | FAIRCHILD | ||
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FDN342P-NL IC | FAIRCHILD SOT-23 | FAIRCHILD | ||
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FDN342P | MOSFET P-CH 20V 2A SUPERSOT3 | onsemi |
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