Product Model

2MBI75J-120

Introduction

IGBT Power Module designed for high power switching applications

Brand and Manufacturer

FUJI

Features

Insulated Gate Bipolar Transistor module

High current handling capability

Low saturation voltage

Fast switching speed

Integrated diode for freewheeling applications

High input impedance

Product Performance

Efficient power conversion

Enhanced thermal performance

Reduced power losses

Excellent ruggedness

Suitable for high-frequency operations

Technical Specifications

Voltage rating: 1200V

Current rating: 75A

Module type: IGBT

Configuration: Dual

Dimensions, Shape, and Packaging

Module package for easy heat sinking

Compact dimensions for space-saving design

Standardized packaging for compatibility

Quality and Reliability

High mean time between failures (MTBF)

Endurance to thermal cycling

Robust in harsh environments

Product Advantages

Energy saving

Low on-state voltage drop

High power density

Product Competitiveness

Superior to traditional power transistors in high voltage applications

Competitive pricing and performance ratios

Compatibility

Designed to be used across various high power electronic applications

Compatible with standard gate drive voltages

Standard Certification and Compliance

Compliant with international standards for IGBT modules

Certified for industrial-grade applications

Lifespan and Sustainability

Long operational lifespan

Constructed with environmentally conscientious materials

Actual Application Fields

Motor control

Inverters for renewable energy

Welding power supplies

Power supply units

Uninterruptible power supplies (UPS)

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