Product Model

2MBI300U4H120-50

Introduction

IGBT Power Module

Brand and Manufacturer

FUJI

Features

Integrated gate bipolar transistor (IGBT) technology

High efficiency and fast switching

Low power consumption and heat generation

Product Performance

Designed for high voltage and high current applications

Excellent thermal performance due to optimized module design

Reduced electromagnetic interference (EMI) for improved reliability

Technical Specifications

Collector-Emitter Voltage: 1200 V

Collector Current: 300 A

Configuration: Dual

Gate-Emitter Voltage: ±20 V

Dimensions, Shape, and Packaging

Module size: 140 mm x 190 mm

Rectangular shape

Standard packaging suitable for transport and storage

Quality and Reliability

Built with robust materials for long-lasting performance

Undergoes rigorous testing to ensure high reliability

Product Advantages

Enhanced control features for precise operation

Energy-efficient design reduces operational costs

Product Competitiveness

High performance to cost ratio

Well-suited for competitive markets requiring durable high-power components

Compatibility

Compatible with a wide range of industrial applications

Adaptable to various high voltage systems

Standard Certification and Compliance

Complies with international safety and performance standards

Lifespan and Sustainability

Designed for extended lifespan under rigorous industrial conditions

Environmentally friendly materials to minimize ecological impact

Actual Application Fields

Suitable for use in energy management systems

Commonly used in motor drives, renewable energy inverters, and power supplies

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